Đăng nhập
 
Tìm kiếm nâng cao
 
Tên bài báo
Tác giả
Năm xuất bản
Tóm tắt
Lĩnh vực
Phân loại
Số tạp chí
 

Bản tin định kỳ
Báo cáo thường niên
Tạp chí khoa học ĐHCT
Tạp chí tiếng anh ĐHCT
Tạp chí trong nước
Tạp chí quốc tế
Kỷ yếu HN trong nước
Kỷ yếu HN quốc tế
Book chapter
Bài báo - Tạp chí
9 (2019) Trang:
Tạp chí: Coatings
Liên kết:

The modeling of p–InxGa1-xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 ◦C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1-xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm-3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm-3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at -5 V and turn-on voltages were found to be 9.31 × 10-7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10-6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm-2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 ◦C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared

Các bài báo khác
 


Vietnamese | English






 
 
Vui lòng chờ...